| PART |
Description |
Maker |
| PD46365084BF1-E40-EQ1 PD46365364BF1-E40-EQ1 PD4636 |
36M-BIT QDRTM II SRAM 4-WORD BURST OPERATION
|
Renesas Electronics Corporation
|
| CAT64LC20ZS CAT64LC20ZP CAT64LC20J-TE7 CAT64LC20J- |
36-Mbit QDR™-II SRAM 4-Word Burst Architecture
36-Mbit QDR™-II SRAM 2-Word Burst Architecture
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL™ Architecture
4-Mbit (128K x 36) Pipelined SRAM with NoBL™ Architecture
4-Mbit (128K x 36) Flow-through SRAM with NoBL™ Architecture
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL™ Architecture
SPI Serial EEPROM SPI串行EEPROM
36-Mbit QDR™-II SRAM 2-Word Burst Architecture SPI串行EEPROM
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM SPI串行EEPROM
256K (32K x 8) Static RAM SPI串行EEPROM
|
Analog Devices, Inc.
Electronic Theatre Controls, Inc.
|
| R1Q3A3609BBG-60R R1Q3A3636BBG-60R R1Q3A3636BBG-50R |
36-Mbit QDR垄芒II SRAM 4-word Burst
36-Mbit QDR?II SRAM 4-word Burst
|
Renesas Electronics Corporation
http://
|
| HM66AEB18205 HM66AEB18205BP-33 HM66AEB18205BP-30 H |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM Separate I/O 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| CY7C1313CV18-167BZC CY7C1315CV18-167BZC CY7C1911CV |
18-Mbit QDR垄芒-II SRAM 4-Word Burst Architecture
18-Mbit QDR??II SRAM 4-Word Burst Architecture
18-Mbit QDR?II SRAM 4-Word Burst Architecture
|
Cypress Semiconductor
|
| CY7C1413BV18-300BZXC CY7C1413BV18-300BZXI CY7C1413 |
36-Mbit QDR垄芒-II SRAM 4-Word Burst Architecture
36-Mbit QDR??II SRAM 4-Word Burst Architecture
36-Mbit QDR?II SRAM 4-Word Burst Architecture
|
Cypress Semiconductor
|
| CY7C1515V18-250BZC CY7C1526V18 CY7C1526V18-167BZC |
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture
72-Mbit QDR⑩-II SRAM 4-Word Burst Architecture
72-Mbit QDR?II SRAM 4-Word Burst Architecture
|
CYPRESS[Cypress Semiconductor]
|
| CY7C1250V18-300BZI CY7C1246V18-333BZI CY7C1246V18- |
36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) 36兆位的DDR - II SRAM2字突发架构（2.0周期读写延迟
36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) 1M X 36 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C1141V18 CY7C1145V18 CY7C1156V18 CY7C1143V18 CY |
18-Mbit QDRII SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) 2M X 9 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor Corp.
|
| CY7C1263V18-300BZI |
36-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 2M X 18 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| CY7C1410V18 CY7C1410V18-167BZC CY7C1410V18-200BZC |
4M X 8 QDR SRAM, 0.45 ns, PBGA165
36-Mbit QDR-II SRAM 2-Word Burst Architecture
36-Mbit QDR-II?/a> SRAM 2-Word Burst Architecture
36-Mbit QDR-II?SRAM 2-Word Burst Architecture
|
CYPRESS SEMICONDUCTOR CORP
|
